The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is completely surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

Прошлые части цикла «Введение в SSD» поведали читателю про историю появления SSD-накопителей, интерфейсы взаимодействия с ними и популярные форм-факторы. Четвёр...

Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how